直流弧光放电化学气相沉积(CVD)法制备金刚石薄膜及其等离子体的光发射谱原位测量  

PREPARATION OF DIAMOND FILMS BY DC ARC DISCHARGE AND IN SITU MEASUREMENTS OF THE PLASMA BY OPTICAL EMISSION SPECTRA

作　　者：张仿清[1] 张亚非 杨映虎[1] 李敬起 陈光华[1] 蒋翔六[2] 

机构地区：[1]兰州大学物理系,兰州730001 [2]北京市科学技术研究院,北京100044

出　　处：《物理学报》1990年第12期1965-1969,共5页Acta Physica Sinica

摘　　要：应用直流弧光放电分解CH_4和H_2混合气体成功地实现了高速生长多晶金刚石膜,应用扫描电子显微镜、X射线衍射仪、Raman谱仪对所得样品进行检测和分析,为了弄清楚金刚石膜的生长机理,在实际生长环境下“原位”测量了不同条件下直流弧光等离子体的光发射谱,结果发现:高速生长金刚石膜的关键是该气相反应中有大量的原子H存在。High quality diamond films have been rapidly synthesised by the DC arc discharge plasma CVD in a hydrogen-methane mixture gas. The properties of the films are tested and analyzed by scanning electron microscopy, X-ray diffraction and Raman spectra. In order to find out the growth mechanism of vapor deposited diamond, in situ optical emission spectra of plasma under practical growth conditions are measured. It is found that the key factor of rapid growth diamond film is the presence of a large number of atomic hydrogen in the plasma.

关 键 词：CVD 金刚石 薄膜 等离子体 

分 类 号：O484.1[理学—固体物理]