LPCVD制备二氧化硅薄膜工艺研究  

Study on preparation of the SiO_2 film thickness by LPCVD

作　　者：王俭峰[1] 佟丽英[1] 李亚光[1] 李秀强[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《电子工业专用设备》2011年第6期24-26,56,共4页Equipment for Electronic Products Manufacturing

摘　　要：采用TEOS源LPCVD法制备了SiO2薄膜,采用膜厚仪对薄膜的厚度进行测试。通过不同条件下SiO2薄膜的厚度变化,讨论了TEOS源温度、反应压力及反应温度等工艺条件对淀积速率和均匀性的影响。结果表明,在40℃,50 Pa左右,淀积速率随TEOS源温度、反应压力基本呈线性增大.通过多次试验改进,提出了SiO2膜淀积的典型工艺条件。Using TEOS source by LPCVD prepared the SiO2 thin film,with film thickness gauge the thickness of the films is tested.Under the SiO2 film thickness of different conditions,Discussed the TEOS source temperature,reaction pressure and reaction temperature and other conditions＇ effects on the deposition rate and uniformity.The results shows,at about 40℃,50Pa,with TEOS source temperature and reaction pressure rising the deposition rate increases linearly.Through several experiments,pointed out a typical process condition of SiO2 film deposition.

关 键 词：TEOS源 LPCVD 淀积速率 均匀性 

分 类 号：TN304.055[电子电信—物理电子学]