用MonteCarlo法模拟大型磁控溅射器的膜厚分布  

Monte Carlo Simulation of The Distribution of thin Film Thickness of Large Size Magnetron Sputtering Device

作　　者：黄士勇[1] 曲风钦[1] 苗晔[1] 董维义[1] 

机构地区：[1]烟台大学物理系,烟台山东264005

出　　处：《真空电子技术》1999年第5期38-42,共5页Vacuum Electronics

摘　　要：在大型薄膜生产设备中，膜厚的横向均匀性是一项重要指标。本文提出用ＭｏｎｔｅＣａｒｌｏ 方法模拟大型磁控溅射器膜厚横向分布的计算方法，计算了靶的几何结构及各种溅射参数对膜厚横向分布的影响，并把计算结果与实际测量进行了比较。The cross uniformity of thin film thickness is an importtant parameter to large scale film production line.The distribution of the thin film thickness is numerically simulated by Monte Carlo method.The effects of the target length,the total pressure and the distance between the target surface and substrate on the distribution of thin film thickness are counted in this paper.The simulation results have been confirmed by the experiments.

关 键 词：膜厚分布 磁控溅射器 MONTE-CARLO法 薄膜 

分 类 号：TB43[一般工业技术]