MOCVD生长温度控制p型InGaN形貌和电学特性提高LED光功率  

Surface morphology and electrical properties control of p-InGaN by MOCVD growth temperature to improve LED light power

作　　者：韩军[1] 邢艳辉[1] 邓军[1] 朱延旭[1] 徐晨[1] 沈光地[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100124

出　　处：《功能材料》2011年第7期1227-1229,共3页Journal of Functional Materials

基　　金：国家高技术研究发展计划(863计划)资助项目(2008AA03Z402);北京市自然科学基金资助项目(4102003;4092007;4112006);北京市教育委员会科技发展计划资助项目(KM200810005002);北京工业大学博士科研启动基金资助项目(X0002013200901;X0002013200902)

摘　　要：利用金属有机物化学气相淀积(MOCVD)技术在蓝宝石衬底上生长了InGaN∶Mg薄膜,通过改变外延生长温度优化p型InGaN∶Mg表面形貌和电学特性。在800℃,InGaN的空穴浓度为1.9×1019cm-3,电阻率较低,通过原子力显微镜观察到粗化的样品表面有很多圆丘,其均方根粗糙度是所有样品中最高的,综合粗化的表面和优化电学特性的p-InGaN接触层的LED光功率提高23%。InGaN∶Mg films have been grown by metal-organic chemical vapor deposition,the surface morphology and electrical properties of the p-InGaN are optimised by changing the epitaxial growth temperature.The sample grown at 800℃ had a lower resistivity than the other samples,hole concentration of the p-InGaN is 1.9×1019cm-3,many knolls for roughen sample surface were observed by atomic force microscopy,its root-mean-square is highest in all samples.The optical power of the LED with roughened surface and optimal electrical properties of p-InGaN contact layer was improved 23%.

关 键 词：Mg掺杂InGaN 金属有机物化学气相淀积 原子力显微镜 X射线双晶衍射 

分 类 号：TN304[电子电信—物理电子学]