采用发射极非均匀指间距技术改善功率异质结双极晶体管热稳定性的研究  

Improvement on thermal stability of power heterojunction bipolar transistor using non-uniform finger spacing

作　　者：陈亮[1] 张万荣 金冬月[1] 谢红云[1] 肖盈[1] 王任卿[1] 丁春宝[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100124

出　　处：《物理学报》2011年第7期794-798,共5页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60776051;61006059;61006044);北京市自然科学基金(批准号:4082007);北京市教委科技发展计划(批准号:KM200710005015;KM200910005001);北京市属市管高等学校人才强教计划(批准号:00200054RA001)资助的课题~~

摘　　要：为了提高多发射极功率异质结双极晶体管的热稳定性,本文利用耦合热阻表征发射极指间距变化对发射极指间热耦合作用的影响,得到了耦合热阻与发射极指间距之间的变化关系,提出了发射极非均匀指间距技术.通过热电反馈模型对采用发射极非均匀指间距技术的功率HBT进行热稳定性分析,得到了多发射极指上的温度分布.结果表明,多发射极HBT在采用非均匀发射极指间距技术后,峰值温度明显下降,温度变化幅度更加平缓,有效地提高了器件的热稳定性.One method of non-uniform finger spacing is proposed to enhance thermal stability of multiple finger power heterojunction bipolar transistor. Using coupling thermal resistance to characterize the influence of the change of emitter spacing on thermal coupling, the relation between coupling thermal resistance and emitter spacing is obtained. Temperature distribution on the emitter fingers of multi-finger heterojunction bipolar transistor is studied by a numerical electro-thermal model. The results show that the heterojunction bipolar transistor with non-uniform finger spacing has a smaller temperature difference between fingers thant the traditional uniform finger spacing heterojunction bipolar transistor under the same power dissipation. So the method of non-uniform finger spacing is very effective to enhance the thermal stability.

关 键 词：异质结双极晶体管 热稳定性分析 发射极 非均匀 间距 技术 功率 耦合作用 

分 类 号：TN322.8[电子电信—物理电子学]