铝膜沉积工艺对AIC法制备多晶硅薄膜的影响  

Influence of Aluminum Deposition Technique on the Property of Polycrystalline Silicon Films by AIC

作　　者：陈海力[1] 沈鸿烈[1] 唐正霞[1] 杨超[1] 江丰[1] 

机构地区：[1]南京航空航天大学材料科学与技术学院,南京210016

出　　处：《材料导报》2011年第14期43-46,共4页Materials Reports

基　　金：国家高技术研究发展计划(863计划)(2006AA03Z219)

摘　　要：采用真空热蒸发和磁控溅射两种方法沉积铝膜,通过对Glass/Si/SiO2/Al叠层结构进行铝诱导晶化(AIC)制备多晶硅薄膜。采用X射线衍射谱(XRD)、光学显微镜和拉曼光谱对样品进行分析,研究两种铝膜沉积工艺对AIC法制备多晶硅性能的影响。结果表明,采用两种方法沉积的铝膜均能诱导出(111)高度择优取向的大晶粒尺寸(～100μm)的多晶硅薄膜,但与磁控溅射沉积相比,真空热蒸发沉积的铝膜诱导出的多晶硅薄膜应力更小、结晶质量更高,且晶化速率更快。Two kinds of aluminum films were deposited by vacuum thermal evaporation and magnetron sputtering. They were used to induce polycrystalline silicon films from glass/Si/SiO2/Al tandem structure by aluminum-induced crystallization（AIC） process. The induced films were characterized with X-ray diffraction（XRD）, optical microscopy and Raman spectroscopy. The influence of different aluminum deposition technique on the property of the polycrystalline silicon films by AIC was studied. The results show that both kinds of aluminum films could induce large grain polycrystalline silicon films（-100μm） with strong preferential（1il） orientation. But compared with magnetron sputtering, the polyerystalline silicon films induced by aluminum deposited by vacuum thermal evaporation have smaller stress, higher crystalline quality, and larger crystallization rate.

关 键 词：铝诱导晶化 多晶硅薄膜 磁控溅射 真空热蒸发 

分 类 号：O484.1[理学—固体物理] TB34[理学—物理]