溅射功率对铝铬共掺杂氧化锌透明导电薄膜特性的影响(英文)  

Influence of Sputtering Power on the Properties of Transparent Conducting Al-Cr Co-doped ZnO Thin Films

作　　者：周爱萍[1] 张化福[1] 刘汉法[1] 

机构地区：[1]山东理工大学理学院,淄博255049

出　　处：《人工晶体学报》2011年第3期727-730,736,共5页Journal of Synthetic Crystals

基　　金：The project supported by Shandong Province Natural Science Foundation(No.ZR2009GQ011)

摘　　要：室温下,利用直流磁控溅射法在玻璃衬底上制备了铝铬共掺杂氧化锌薄膜,研究了溅射功率(55-130 W)对薄膜结构、残余应力、表面形貌及其光电性能的影响。结果表明,ZnO(002)衍射峰的强度随着溅射功率的增大而增强,晶体结构得以改善。晶格常数、压应力和电阻率均随着溅射功率的增大而减小。当溅射功率为130 W时,制备的ZnO∶Al,Cr薄膜的最低电阻率可达1.09×10-3Ω.cm。功率由55 W增大到130 W时,光学带隙由3.39 eV增大到3.45 eV。紫外-可见透射光谱表明,所有薄膜在可见光范围内平均透过率均超过89%。A series of ZnO thin films doped with aluminum and chromium were deposited on glass substrates at room temperature by direct current magnetron sputtering.The influence of sputtering power（55-130 W）on the structure,residual stress,surface morphology,photoelectric properties of the films were studied.The results indicated that as the sputtering power increasing,the crystalline structure of the films improved,the ZnO（002） preferred orientation enhanced.The lattice constant,the compressive stress and electrical resistivity decreases gradually as the sputtering power increasing.The lowest electrical resistivity for ZnO∶Al,Cr films was 1.09×10-3 Ω·cm when the sputtering power was 130 W.The optical band gap was found to be 3.39 eV for 55 W and it increases to 3.45 eV for 130 W.The UV-vis transmittance spectrum revealed that the films show a high average transmittance of above 89% in the visible range.

关 键 词：溅射功率 磁控溅射 ZnO∶Al Cr薄膜 

分 类 号：TQ586[化学工程—精细化工]