GaN基PIN结构X射线探测器  

GaN-based PIN Detectors for X-ray Detector

作　　者：付凯[1,2] 于国浩[1] 陆敏[1] 

机构地区：[1]中国科学院苏州纳米技术与纳米仿生研究所,江苏苏州215123 [2]中国科学院研究生院,北京100039

出　　处：《发光学报》2011年第7期720-723,共4页Chinese Journal of Luminescence

基　　金：国家自然科学基金(10875084);江苏省自然科学基金(BK2008174);苏州市应用基础研究计划(SYJG0915);国家重点基础研究发展计划(G2009CB929300)资助项目

摘　　要：使用GaN基材料制备了PIN结构核辐射探测器,研究了探测器对X射线响应的多方面性能。在没有X射线照射时,探测器具有很小的漏电流,在-10 V时小于0.1 nA。对探测器的X射线的响应时间特性进行了分析和模拟,给出了很好的物理机制解释。研究了信噪比随外加偏压的变化,并得到了最佳信噪比对应的工作电压为-20 V。GaN-based PIN radiation detectors were fabricated,and various response properties of the detectors under X-ray irradiation were studied.In the absence of X-ray irradiation,the detectors have very low leakage current less than 0.1 nA at-10 V.Time response of the detectors to X-ray was analyzed and simulated,following a reasonable interpretation of the physical mechanism.The relationship between signal to noise ratio（SNR） and applied bias was investigated,and an optimum voltage of-20 V corresponding to the best SNR was found.

关 键 词：GAN X射线探测器 信噪比 时间响应 

分 类 号：O472.3[理学—半导体物理] TN364.2[理学—物理]