直流反应磁控溅射制备氧化铝薄膜  

Aluminium Thin Film Prepared by Direct Current Reactive Magnetron Sputtering

作　　者：唐秀凤[1] 罗发[1] 周万城[1] 朱冬梅[1] 

机构地区：[1]西北工业大学凝固技术国家重点实验室,陕西西安710072

出　　处：《热加工工艺》2011年第14期120-123,共4页Hot Working Technology

摘　　要：采用直流反应磁控溅射,以高纯Al为靶材,高纯O2为反应气体,在镍基合金和单晶硅基片上制备了氧化铝薄膜,并对氧化铝薄膜的沉积速率和表面形貌进行了研究。结果表明,氧化铝薄膜的沉积速率随溅射功率的增大先几乎呈线性增大而后增速趋缓;随溅射气压的增加,沉积速率先增大,在1.0Pa时达到峰值,而后随气压继续增大而减小;随Ar/O2流量比的不断增加,沉积速率也随之不断增大,但是随着负偏压的增大,沉积速率先急剧减小而后趋于平缓。用扫描电子显微镜对退火处理前后的氧化铝薄膜表面形貌进行观察,发现在500℃退火1h能够使氧化铝薄膜致密化和平整化。Aluminium thin film was prepared by direct current reactive magnetron sputtering on Ni alloy and silicon wafer substrates with the pure aluminum as the target and pure O2 as the reactive gas.The deposition rate and morphology of the aluminium thin film was studied.The results show that the deposition rate firstly increases linearly and then changes little with the increase of sputtering power.At first,the deposition rate increases with the increase of working pressure and reaches the biggest value at 1.0 Pa and then begin to decrease when the working pressure increases further.While the deposition rate continuously increases with the increase of Ar/O2 flow rate.Firstly,the deposition rate decreases sharply with the rising negative bias and then varies little.The surface morphology of the aluminium film before and after annealing was observed by SEM.The film annealing at 500 ℃ for 1 h gets more compact and smooth.

关 键 词：直流反应磁控溅射 氧化铝薄膜 沉积速率 退火 表面形貌 

分 类 号：TG174[金属学及工艺—金属表面处理]