高功率1.31μm AlGaInAs应变多量子阱DFB激光器  

High power 1.31 um AlGaInAs strain multiquantum well DFB laser

作　　者：杨新民[1] 李同宁[1] 刘涛[1] 周宁[1] 金锦炎[1] 李晓良[1] 

机构地区：[1]武汉邮电科学研究院,湖北武汉430074

出　　处：《光通信研究》1999年第6期44-46,59,共4页Study on Optical Communications

摘　　要：采用金属有机化学汽相淀积工艺和脊型波导结构，同１．３１μｍＡｌＧａＩｎＡｓ／ＩｎＰ应变多量子阱分布反馈激光器高功率输出。在２５℃时，管芯最大输出功率超过５０ｍＷ，阈值电流范围在１３－２０ｍＡ之间，发光面斜效率高于０．４５ｍＷ／ｍＡ，边模抑制比超过３５ｄＢ，室温中值寿命大于３＊１０＾５小时。A high power 1. 31 um AlGaInAs/InP strained layer multiquantum well distributed feedback (SL MQW DFB LD) with RWG structure has been developed by MOCVD technique. The maximum output power of chip was larger than 50 mW at 25℃,thresthod currents (Ith )were in the range of (13~20) mA, the front facet slope efficiency (Es) was higher than o. 45 mW/mA. Side mode suppression ratio (SMSR)exceeded 35 dB, Median to time failure at room temperature was larger than 3×105hour.

关 键 词：ALGAINAS 应变多量子阱 DFB激光器 

分 类 号：TN248[电子电信—物理电子学]