SAW器件用金刚石膜的制备工艺研究  

Fabrication process research of diamond film for SAW devices

作　　者：李德贵[1,2] 冉均国[1] 苟立[1] 

机构地区：[1]四川大学材料科学与工程学院,四川成都610065 [2]百色学院物理与电信工程系,广西百色533000

出　　处：《电子元件与材料》2011年第9期13-16,共4页Electronic Components And Materials

基　　金：国家自然科学基金资助项目(10275046);百色学院引进人才启动资金资助项目

摘　　要：针对声表面波(SAW)器件对金刚石膜的要求,采用石英钟罩式微波等离子体化学气相沉积(MPCVD)装置,研究了不同气体体系对金刚石膜生长速率、电阻率、表面形貌、表层C化合态及相对含量(粒子数分数XC)的影响。结果表明:在H2-CH3COCH3、CH4-H2-Ar和CH4-H2-N2三种气体体系下,金刚石膜的生长速率分别达0.63,0.59和0.58μm/h,较常规CH4-H2体系提高了1倍左右,且金刚石膜电阻率高(1010Ω.cm)、晶型好、晶粒尺寸小、表层金刚石C—C键相对含量高(XC>80%)。氧、氩和氮对提高金刚石膜的生长速率和质量效果显著。In order to improve the properties of diamond film and meet the preparation of SAW devices, with bell jar microwave plasma chemical vapor deposition （MPCVD） equipment, the influence of different gas systems on the growth rate, resistivity, surface morphology and relative contents of carbon combined states of diamond films were studied. The results show that with HE-CH3COCH3, CH4-H2-Ar and CH4-H2-N2 gas systems, the growth rate of diamond films are up to 0.63, 0.59 and 0.58 pm/h respectively, which double that with CH4-H2 gas system at least, and the diamond films have high resistivity （10^10Ω· cm）, good crystal form, small grain size and high relative content （fraction of number of particles）of diamond C-C bond （more than 80%）. Accordingly, oxygen, argon and nitrogen play an important role in the deposition of diamond film.

关 键 词：金刚石膜 生长速率 微波等离子体化学气相沉积 声表面波器件 

分 类 号：TB43[一般工业技术]