CMOS电容式湿度传感器特性研究  

A Study on the Performance of a CMOS Capacitive Humidity Sensor

作　　者：刘岩[1] 赵成龙[1] 聂萌[1] 秦明[1] 

机构地区：[1]东南大学MEMS教育部重点实验室,南京210096

出　　处：《电子器件》2011年第4期379-382,共4页Chinese Journal of Electron Devices

基　　金：国家863高技术研究发展计划项目(2009AA04Z322);国家自然科学基金项目(60901009)

摘　　要：提出了一种CMOS电容式湿度传感器特性研究方案。研究所用的微电容湿度传感器由标准CMOS工艺结合MEMS后处理技术加工而成。为了测试湿度传感器的响应时间,设计了一种响应时间测试装置。测试结果表明,该电容式湿度传感器在相对湿度25%～95%的范围内具有较好的线性度;其回滞在75%RH时达到最大,为2%RH;该传感器响应时间较短;短期测试无明显漂移。A study on the performance of a CMOS capacitive humidity sensor is presented. This humidity sensor was fabricated with the standard CMOS technology and the MEMS post-processing step. To test the response time of the humidity sensor,an experimental set-up was designed. As can be seen from the measurements, the sensor shows a good linearity over the testing range from 25% RH to 95% RH. The maximum hysteresis of the sensor is 2% RH, at 75% RH. And the sensor has a short response .time. No obvious drift can be found after the sensor was tested in a short period

关 键 词：电容式传感器 湿度传感器 CMOS工艺 MEMS 

分 类 号：TP212.1[自动化与计算机技术—检测技术与自动化装置]