生长系统对高阻区熔硅单晶径向电阻率变化的影响  

The Influence of Growth System on the Radial Resisitivity Variation of FZ-Si with Higher Resistivity

作　　者：闫萍[1] 索开南[1] 庞炳远[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《电子工业专用设备》2011年第9期11-13,38,共4页Equipment for Electronic Products Manufacturing

摘　　要：分别采用L4375-ZE区熔炉和CFG/1400P区熔炉,生长了N型、(1.5～4.5)×103Ω.cm和P型、(1.0～5.0)×104Ω.cm两种规格的高阻区熔硅单晶,单晶的直径为52～54 mm,晶向为<111>。经对单晶的电阻率及其径向分布进行检测对比后发现,在加热线圈几何结构(包括上下表面角度、内径尺寸及台阶设计)基本相同、单晶生长速率相同且上、下晶轴旋转具有相同配置的情况下,不同的单晶生长系统所生长的单晶,其电阻率径向均匀性有明显差异,用L4575-ZE区熔炉生长的单晶的电阻率径向分布更均匀。In this paper,two kind of float-zone furnaces L4375-ZE and CFG/1400P that has different hearth size had been used to grow silicon single crystals with higher resistivity.The resistivity of the crystals that have been grown with each furnace is（1.5～4.5）×103 Ω·cm with N-type conduction and（1.0～5.0）×104 Ω·cm with P-type conduction.The crystal be grown is with 111 orientation and with the diameter（52～54）mm.It＇s found that when using induction coil with same geometrical structure at this two furnaces and taking the same process parameters,the radial resistivity variation of the crystals with same resisitivity range but grown with different furnace is very different.The radial resistivity of the crystal grown with furnace L4375-ZE which has lesser size is more homogeneous.

关 键 词：区熔炉 高阻 硅单晶 电阻率径向分布 

分 类 号：TN304.05[电子电信—物理电子学]