C60场效应晶体管的制备及修饰层对器件性能影响的研究  

Fabrication of C_(60)-based organic field effect transistors and effects of buffer layers on the performance of the devices

作　　者：郑宏[1] 程晓曼[2] 闫齐齐[1] 田海军[1] 赵赓[2] 印寿根[1] 

机构地区：[1]天津理工大学材料物理研究所,教育部显示材料及发光器件重点实验室,天津300384 [2]天津理工大学理学院,天津300384

出　　处：《光电子．激光》2011年第10期1467-1470,共4页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目(61076065);天津自然科学基金资助项目(07JCYBJC12700)

摘　　要：以重掺杂Si片作为衬底,SiO2/聚甲基丙烯酸甲酯(PMMA)为双栅绝缘层,C60为有源层,制备了不同修饰层的有机场效应晶体管(OFETs);研究了不同修饰层的器件对于场效应性能的影响。实验表明,与未加修饰层的器件相比,经过修饰的器件性能有一定的提高,其中Alq3/LiF双修饰层器件的场效应迁移率达到最大,为1.6×10-2 cm2/V.s。根据热动力学反应关系分析表明,Alq3/LiF间的协同作用导致电极和有源层的接触势垒降低是器件性能提高的原因。We have fabricated C60-based n-type organic field-effect transistors （OFETs） with different buffer layers with n-doped silicon substrate as the gate electrode and SiO2/PMMA as the dielectric. The performance of different modified devices is also investigated. Compared with the one without modified layer, the modified ones show a certain improvement and the bi-layer deviee shows the highest mobility, which is up to 1.6× 10-2 cm2/V·s. Furthermore, the operation mechanism of the bi-layer device has been analyzed according to the chemical reaction between Alq3/LiF after Al deposition.

关 键 词：有机场效应晶体管(OFETs) 双修饰层 场效应迁移率 

分 类 号：TN253[电子电信—物理电子学]