氧气流量对磁控溅射AZO薄膜光电性能的影响  

Influence of Oxygen Flux on Optoelectronic Properties of AZO Films Deposited by Magnetron Sputtering Method

作　　者：丁宇[1] 蒋百灵[1] 田亚萍[1] 马二云[1] 张晓静[1] 曹智睿[1] 赵志明[1] 

机构地区：[1]西安理工大学材料科学与工程学院,陕西西安710048

出　　处：《西安理工大学学报》2011年第3期306-310,共5页Journal of Xi'an University of Technology

基　　金：陕西省重点学科建设专项资金资助项目(101-00X901);陕西省自然科学基金资助项目(101-221007)

摘　　要：采用直流反应磁控溅射方法在载玻片基体上制备AZO薄膜,研究氧气流量对所制备AZO薄膜光电性能及微观结构的影响。结果表明,氧气流量显著影响AZO薄膜的光电性能和结晶状况,当氧气流量高于0.08×10-6 m3/s时所制备的薄膜可见光透过率高但薄膜不导电;当氧气流量低于0.04×10-6 m3/s时沉积的薄膜呈现出金属性特征,薄膜导电不透明;只有在一个较窄的氧气流量范围内才能制备出光电性能均优的AZO薄膜。当氧气流量为0.06×10-6 m3/s时沉积的AZO薄膜具有较低的电阻率,为2.39×10-3Ω.cm,且薄膜在可见光区薄膜的平均透过率在90%以上。AZO films are deposited onto the glass substrates by DC magnetron sputtering method.The influences of oxygen flow on optoelectronic properties and microstructure of AZO are studied.The results show that oxygen flux can dramatically affect the optoelectronic properties and crystalline status of AZO films.The films have excellent transmittance but poor electronic conductivity at an oxygen flux higher than 0.08×10^-6 m^3/s.While the oxygen flux is lower than 0.04×10^-6 m^3/s,the films deposited exhibit metallic characteristic（conductive but not transparent）.Accordingly,only in a narrow range of oxygen flux AZO films with both high transmittance and low resistivity can be obtained or prepared.The film prepared at 0.06×10^-6 m^3/s oxygen flux has a low resistivity of 2.39×10^-3 Ω·cm,and a transmittance of above 90% in the visible range.

关 键 词：AZO薄膜 直流反应磁控溅射 氧气流量 光电性能 

分 类 号：O484.1[理学—固体物理]