初始埚位对单晶少子寿命的影响  

Study on the CZ-Si Growth Process of High Minority Carrier Lifetime

作　　者：任丽[1] 罗晓英[2] 李宁[2] 王倩[2] 

机构地区：[1]河北工业大学化工学院,天津300130 [2]河北工业大学材料学院,天津300130

出　　处：《半导体技术》2011年第10期782-785,共4页Semiconductor Technology

摘　　要：在KX260晶体生长系统上装备24英寸(1英寸=2.54 cm)热场,装料量为120 kg。采用5种不同的初始埚位(-50,-60,-70,-80,-90 mm),其他工艺参数相同的晶体生长工艺,拉制了5根200 mm、p型、晶向〈100〉、电阻率2Ω.cm的单晶硅棒。待硅棒冷却后,取片进行少子寿命和氧含量的测试,根据所得数据分析不同初始埚位对少子寿命的影响。由分析结果得出结论:随着初始埚位的提升,单晶硅棒少子寿命逐渐降低。结合实际生产利润及硅片品质需要,最后得到最适合晶体生长的初始埚位是-70 mm。The 24″thermal field was installed in KX260 crystal growth system with 120 kg materials.5 silicon single crystals（200 mm,p type, 〈100〉,resistivity： 2 Ω·cm）were got with 5 different kinds of the beginning crucible positions（-50,-60,-70,-80,-90 mm）and the same crystal growing technological.After cooling,the minority carrier lifetime and the oxygen content were cut for test.The relationship between the different beginning crucible positions and minority carrier lifetime were analyzed.The experimental results show that with the ascension of the beginning crucible position,the minority carrier lifetime gradually reduces.Considering the actual production,the best suit of crystal growth beginning crucible position is-70 mm.

关 键 词：直拉硅单晶 初始埚位 少子寿命 氧含量 硅棒 

分 类 号：TN304[电子电信—物理电子学]