S波段GaN大功率放大器的设计与实现  

Design and Implementation of An S-Band GaN High Power Amplifier

作　　者：杨斐[1] 周永伟[1] 马云柱[1] 王海涛[1] 

机构地区：[1]西安电子工程研究所,西安710100

出　　处：《火控雷达技术》2011年第3期86-90,共5页Fire Control Radar Technology

摘　　要：本文介绍了基于新型GaN宽禁带半导体材料的大功率器件的特点和优势,采用微波仿真软件ADS对一款S波段的GaN MOSFET进行优化仿真设计,得到了良好的仿真结果,并给出了该功放的实物和测试数据。测试结果表明,该功放适用于2.1～2.7GHz,功率量级为100W,连续波和脉冲制式均可工作,对GaN MOSFET功率器件高增益、高效率、宽带宽的优异性能得以验证和实现。Features and advantages of high-power amplifiers based on GaN semiconductor materials with wide bandgap are introduced. Optimization simulation design of an S-band GaN MOSFET is conducted by using of micro- wave simulation software ADS, good simulation results are obtained and test data are provided. The test results in- dicate that power-level of the power amplifier can exceed 100W at 2. 1 to 2.7GHz, and it can work both in pulse and continuous wave modes, and it also proves that the GaN MOSFET power components have excellent perform- ances such as high gain, high efficiency and wide bandwidth.

关 键 词：S波段 GAN MOSFET 宽禁带 

分 类 号：TN74[电子电信—电路与系统]