InAs/GaSb超晶格中波焦平面材料的分子束外延技术  

Mid-wavelength infrared InAs/GaSb superlattice grown by molecular beam epitaxy

作　　者：徐庆庆[1] 陈建新[1] 周易[1] 李天兴[1] 吕翔[1] 何力[1] 

机构地区：[1]中国科学院上海技术物理研究所中国科学院红外成像材料与器件重点实验室,上海200083

出　　处：《红外与毫米波学报》2011年第5期406-408,438,共4页Journal of Infrared and Millimeter Waves

摘　　要：报道了InAs/GaSb超晶格中波材料的分子束外延生长技术研究.通过改变GaSb衬底上分子束外延InAs/GaSb超晶格材料的衬底温度,以及界面的优化等,改善超晶格材料的表面形貌和晶格失配,获得了晶格失配Δa/a=1.5×10-4,原子级平整表面的InAs/GaSb超晶格材料,材料77 K截止波长为4.87μm.The growth of mid-wavelength infrared InAs/GaSb superlattice on GaSb substrates by molecular beam epitaxy（MBE）was studied.We optimized the substrate temperature and interface structures to obtain high quality material.The InAs/GaSb superlattice layers were characterized by Atomic Force Microscope（AFM）,high resolution X-ray diffraction（XRD） and Fourier Transform Infrared Spectrum.We found the optimal substrate temperature for GaSb and superlattice is 485℃ and 450℃ respectively.We finally obtained highly lattice matched InAs/GaSb materials with 50% cut-off wavelength at 4.84 μm at 77 K.

关 键 词：INAS/GASB 超晶格 分子束外延 

分 类 号：TN213[电子电信—物理电子学]