Si基HgCdTe变面积光伏探测器的变温特性研究  

Temperature dependent characteristics of HgCdTe variable-area photovoltaic detectors on Si substrates

作　　者：张姗[1,2] 胡晓宁[1] 

机构地区：[1]中国科学院红外成像材料与器件重点实验室,上海200083 [2]中国科学院研究生院,北京100039

出　　处：《红外与毫米波学报》2011年第5期412-414,418,共4页Journal of Infrared and Millimeter Waves

基　　金：中国科学院知识创新工程前沿前瞻性项目(批准号:C2-53)

摘　　要：通过变面积Si基HgCdTe器件变温I-V测试和暗电流特性拟合分析,研究了不同偏压下n-on-p型Si基HgCdTe光伏器件的暗电流成分与Si基HgCdTe材料少子扩散长度和少子寿命随温度的变化规律.在液氮温度下,随着反向偏压的增大器件的表面漏电流在暗电流中所占比重逐渐增加.在零偏压下,当温度低于200 K时材料的少子扩散长度随温度的升高而变大,而高于200 K时材料的少子扩散长度随温度的降低逐渐减小.将汞空位掺杂的p型Si基HgCdTe材料少子寿命的变温曲线与常规衬底材料的少子寿命变温曲线进行比较,发现Si基HgCdTe材料少子寿命接近常规衬底外延薄膜材料水平.The variable-area HgCdTe/Si photovoltaic detector was investigated in this paper.By analyzing the relationship of dark current density（J） and the ratio of perimeter to area（p/A） under different reverse bias,it is indicated that the n-on-p type HgCdTe/Si photovoltaic detector has a significant surface leakage current under larger reverse bias.The minority carrier diffusion length at different temperature can be obtained by fitting the relationship between the product of zero-bias resistance and area（R0A） and p/A.It shows that the minority carrier diffusion length increases with the increase of temperature below 200 K,while the minority carrier diffusion length decreases with the increase of temperature above 200 K.The minority carrier lifetime of Hg-vacancy p-type HgCdTe on Si substrate was calculated from the minority diffusion length at different temperature.It was concluded that the lifetime of HgCdTe/Si minority carrier and its relationship with the temperature is the same as that of HgCdTe/CdZnTe material by comparing the minority carrier lifetime for these two kinds of materials.

关 键 词：Si基HgCdTe 少子寿命 少子扩散长度 变温特性 

分 类 号：TN215[电子电信—物理电子学]