磁控溅射AlN:Mg/ZnO:Al异质结二极管及其光电特性的研究  

AlN:Mg/ZnO:Al Hetero-Junction by Magnetron Sputtering and Their Optoelectrical Characteristics

作　　者：赵启义[1] 祁康成[1] 李国栋[1] 李鹏[1] 

机构地区：[1]电子科技大学光电信息学院,成都610054

出　　处：《电子器件》2011年第5期485-488,共4页Chinese Journal of Electron Devices

基　　金：四川省应用基础研究项目(2009JY0054)

摘　　要：利用磁控溅射方法,在ITO玻璃基底上分别溅射镁掺杂的氮化铝(AlN:Mg)薄膜、铝掺杂的氧化锌(ZnO:Al或AZO)薄膜,成功制备AlN:Mg/ZnO:Al透明异质结二极管。实验结果表明:AlN:Mg/ZnO:Al异质结具有明显的I-V整流特性,正向开启电压1 V左右,在氙灯光照下,二极管的反向电流在5V偏置时达到3mA。二极管在可见光区域的平均透过率在80%以上,适用于太阳电池的窗口层的研究。Transparent films of Magnesium doped azotized aluminum（AlN：Mg）,Aluminum-doped zinc oxide（ZnO：Al or AZO）were deposited on an ITO glass substrate by magnetron sputtering and were processed to fabricate a AlN：Mg/ZnO：Al transparent diode.The diode exhibited a clear rectifying I-V characteristic with a forward threshold voltage of 1 V.Through the application of a reverse bias of 5 V under the irradiation of Xenon lamp,the reverse current approached to 1.5 mA.The average transmittance of the diode was about 80%,fitting the study of window layer of solar cells.

关 键 词：磁控溅射 AlN:Mg薄膜 AZO薄膜 异质结二极管 

分 类 号：TN304.2[电子电信—物理电子学]