集成电路互连线用高纯铜靶材及相关问题研究  

Research on Copper Sputtering Targets in ULSI and Related Problems

作　　者：高岩[1,2] 王欣平[1,2] 何金江[1,2] 董亭义[1,2] 蒋宇辉[1,2] 江轩[1,2] 

机构地区：[1]北京有色金属研究总院,北京100088 [2]有研亿金新材料股份有限公司,北京102200

出　　处：《半导体技术》2011年第11期826-830,共5页Semiconductor Technology

基　　金：国家科技重大专项资助项目(2011ZX02705-004)

摘　　要：随着半导体技术的发展,芯片特征尺寸缩小到深亚微米和纳米时,铜互连技术在集成电路的设计和制造中成为主流技术,从而对高纯铜靶材的要求越来越高。从靶材制造的角度利用材料学的知识对铜靶材的晶体结构、纯度、致密度、微观组织及焊接性能等方面作了分析,并且较全面地分析了可能影响靶材溅射性能的很多关键因素,从而为靶材供应商和集成电路制造商对于铜靶材的了解搭建了桥梁,为进一步开发超大尺寸的高纯铜靶材打下基础。With the development of semiconductor technology, the dimension of CMOS chip reduces into micrometer and nanometer. The technology of copper interconnection is the mainstream technology, so the requests of the copper target are more and more rigor. From the point of view of the target in manufacture, crystal structure, purity, compact ability, microstructure and bonding of cop target capability are analyzed, using the knowledge of material. The key factors influenced performances of target sputtering are analyzed. A bridge between the copper target provider and factory of CMOS chip is put up, and the base for the next generation copper targets is built. per the the

关 键 词：集成电路IC 互连线 焊接强度 铜靶材 溅射 

分 类 号：TG146.11[一般工业技术—材料科学与工程]