铜线键合Cu/Al界面金属间化合物微结构研究  

Properties of Cu-Al Intermetallic Compounds in Copper Wire Bonding

作　　者：刘兴杰[1] 张滨海[1] 王德峻 从羽奇 王家楫[1] 

机构地区：[1]复旦大学材料科学系,上海200433 [2]日月光封装测试有限公司,上海201203

出　　处：《半导体技术》2011年第11期880-884,共5页Semiconductor Technology

摘　　要：由于铜线具有较高的热导率、卓越的电学性能以及较低的成本,被普遍认为将逐渐代替传统的金线而在IC封装的键合工艺中得到广泛的应用。铜线键合工艺中Cu/Al界面金属间化合物(IMC)与金线键合的Au/Al IMC生长情况有很大差别,本文针对球焊键合中键合点的Cu/Al界面,将金属间化合物生长理论与分析手段相结合,研究了Cu/Al界面IMC的生长行为及其微结构。文中采用SEM测试方法,观察了IMC的形貌特点,测量并得到了IMC厚度平方正比于热处理时间的关系,计算得到了生长速率和活化能数值,并采用TEM,EDS等测试手段,进一步研究了IMC界面的微结构、成分分布及其金相结构。For its higher thermal conductivity, better electrical property and lower cost, copper wire is considered to replace the conventional gold wire and become widely used in IC assembly bonding processes recent years. The growth of Cu/A1 intermetallic compounds （IMC） is different from that of Au/ AI IMC in gold wire bonding, the study was focused on Cu/AI first bonding to learn Cu/A1 interface properties and behaviors, combining theories with many analysis methods, and get a systematic study on Cu/AI IMC growing process and its micro - structure. By means of SEM analysis methods, topography feature of the IMC was observed, the square of IMC thickness was measured and found being proportional to heat treatment time, Cu/A1 IMC growing rate and activation energy were also calculated. The IMC microstructure, the element distribution in IMC interface region and its metallurgical structure were further investigated by means of TEM and EDS.

关 键 词：封装 铜线键合 微结构 金属间化合物 扩散 

分 类 号：TN305.96[电子电信—物理电子学]