椭球谐振腔式MPCVD装置高功率下大面积金刚石膜的沉积  

Deposition of Polycrystalline Diamond Films by Using an Ellipsoidal MPCVD Reactor at High Microwave Power Levels

作　　者：于盛旺[1] 范朋伟[1] 李义锋[1] 刘艳青[1] 唐伟忠[1] 

机构地区：[1]北京科技大学材料科学与工程学院,北京100083

出　　处：《人工晶体学报》2011年第5期1145-1149,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金(10675017)

摘　　要：使用自行研制的椭球谐振腔式MPCVD装置,以H2-CH4为气源,在输入功率为9 kW,沉积压力为1.7×104 Pa和不同的气体流量条件下制备了金刚石膜。利用扫描电镜、激光拉曼谱对金刚石膜的表面和断口形貌、金刚石膜的品质等进行了表征。实验结果表明,利用椭球谐振腔式MPCVD装置能够在较高的功率下进行大面积金刚石膜的沉积;在高功率条件下,较高质量的金刚石膜的沉积速率可以达到4～5μm.h-1的水平,而气体的流量则会显著影响金刚石膜的品质及其沉积速率。Polycrystalline diamond films were grown using H2-CH4 as the source gas in a newly developed ellipsoidal MPCVD reactor at an input microwave power of 9 kW,deposition pressure of 1.7×104 Pa and different gas flow rates.The surface and cross-sectional morphology,as well as the quality of the samples were characterized by scanning electron microscope and Raman spectroscope.Experimental results show that the ellipsoidal MPCVD reactor is able to deposit large area diamond films at high power levels.The deposition rate of high quality diamond films could reach 4-5 μm·h-1,and the gas flow rate has significant influence on the deposition rate and quality of the diamond films.

关 键 词：椭球谐振腔式MPCVD装置 金刚石膜 高功率 气体流量 生长速率 

分 类 号：O484[理学—固体物理]