非晶态SiO_2过渡层对生长C轴取向LiNbO_3薄膜的影响  

Effects of amorphous SiO_2 buffer layer on the growth of c-axis oriented LiNbO_3 film

作　　者：肖庆[1] 安玉凯[1] 李响[1] 许丽丽[1] 吴一晨[1] 段岭申[1] 刘技文[1] 

机构地区：[1]天津理工大学材料科学与工程学院天津市光电显示材料与器件重点实验室,天津300384

出　　处：《光电子．激光》2011年第11期1667-1670,共4页Journal of Optoelectronics·Laser

基　　金：天津市科技计划资助项目(06TXTJJC14600)

摘　　要：采用磁控溅射方法,在Si衬底和LiNbO3薄膜之间引入SiO2过渡层制备LiNbO3薄膜。采用X射线衍射(XRD)、傅里叶变换红外吸收光谱(FT-IR)和扫描电子显微镜(SEM)对LiNbO3薄膜的结晶取向、组成成分和表面形貌进行了表征,重点研究了非晶态SiO2过渡层对LiNbO3薄膜C轴取向的影响。结果表明,非晶态SiO2过渡层为10～50nm时,在Si(100)衬底上制备的LiNbO3薄膜的C轴取向随着过渡层厚度的增加而变强,但当过渡层超过30nm时,对LiNbO3薄膜C轴取向的影响变小;在Si(111)衬底上制备的LiNbO3薄膜,当非晶态SiO2过渡层为10nm时,LiNbO3薄膜具高C轴取向,C轴取向的织构系数(TC)为90%,且结晶质量良好,但随着过渡层厚度增加,LiNbO3薄膜的C轴取向反而变弱。A SiO2 buffer layer was introduced to deposite high c-axis oriented LiNbO3 film on Si substrate by radio-frequency （RF） magnetron sputtering technique. The crystal orientation, composition and surface morphology of the thin films were characterized by the X-ray diffraction （XRD） ,Fourier transform infrared spectrometer （FTIR）, and scanning electron microscopy （SEM）, respectively. The effects of the amorphous SiO2 buffer layer on the c-axis orientation of LiNbO3 film were investigated. The results show that when the thickness of amorphous SiO2 buffer layer is from 10 nm to 50 nm, the c-axis orientation of LiNbO3 film deposited on Si （100） substrate is enhanced with the increase of the thickness of the amorphous SiO2 buffer layer, but when the thickness of the buffer layer exceeds 30 nm, the change of the c-axis orientation ig little;the LiNbO3 film deposited on Si （111） substrate has high c-axis orientation and good crystalline quality,when the thickness of amorphous SiO2 buffer layer is 10 nm. The texture coefficient of the c-axis orientation of LiNbO3 film is 90%, but the c-axis orientation of LiNbO3 film is weakened as the thickness of the buffer layer increases.

关 键 词：磁控溅射 LiNbO3薄膜 SiO2过渡层 C轴取向 

分 类 号：O484[理学—固体物理]