八胞合成X波段140W AlGaN/GaN HEMT的研究与应用  

Research and Application of X-band 140 W AlGaN/GaN Power HEMT with Eight Cells Internal Matching

作　　者：钟世昌[1] 陈堂胜[1,2] 张斌[1,2] 任春江[1,2] 陈辰[1,2] 高涛[1,2] 

机构地区：[1]南京电子器件研究所,南京210016 [2]微波毫米波单片集成和模块电路重点实验室,南京210016

出　　处：《固体电子学研究与进展》2011年第5期442-444,493,共4页Research & Progress of SSE

摘　　要：主要研究第三代半导体AlGaN/GaN功率管内匹配问题。采用8个2.5 mm GaN功率芯片设计、合成以及内匹配电路的测试,在漏极电压40 V,脉冲占空比10%,脉宽100μs的条件下进行功率匹配,实现了GaN功率HEMT在X波段8 GHz 140 W功率输出的内匹配电路,并使整个电路的输入、输出电路阻抗提升至50Ω,功率增益大于6 dB,功率附加效率达到28.66%,输出功率密度高达7 W/mm。The paper researches the AlGaN/GaN internal matching technology.Using in-house made eight 2.5 mm GaN power HEMT transistors,the internal matching transistor demonstrates an output pluse power of more than 140 W with a power gain of over 6 dB,PAE of 28.66% at 8 GHz,operating at 40 V drain bias voltage with the plused conditions at a duty of 10% with a pulse width of 100 μs.In this case,the HEMT has the output power density as high as 7 W/mm.

关 键 词：氮化镓 功率管 内匹配 

分 类 号：TN386[电子电信—物理电子学]