超结与浮结型肖特基势垒二极管的比较研究(英文)  

Comparison Study of Superjunction and Floating Junction Schottky Barrier Diodes

作　　者：曹琳[1] 蒲红斌[1] 陈治明[1] 

机构地区：[1]西安理工大学自动化学院电子工程系,西安710048

出　　处：《固体电子学研究与进展》2011年第5期449-453,488,共6页Research & Progress of SSE

基　　金：Project Supported by the Open Fund of Key Laboratory of Wide Bandgap Semiconductors Material and Devices,Ministry of Education,China;The Research Fund for Excellent Doctor Degree Thesis of Xi'an University of Technology

摘　　要：对浮结型及超结型肖特基势垒二极管静态及动态特性进行了解析及模拟。静态特性通过解析击穿电压与导通电阻之间的关系得到。反向恢复特性通过二极管电容随反向电压变化关系解释,商用混合模拟器MEDICI模拟结果表明浮结结构具有软恢复特性,软度因子为0.949。超结结构恢复特性较硬,软度因子为0.780 7。当考虑这两种耐压结构时,必须权衡静态及动态之间的关系。In this paper,the static and dynamic characteristics of superjunction and floating junction Schottky barrier diodes were analyzed and simulated.Work principles of the device were reported,trade-off between breakdown voltage and specific resistance was theoretically calculated and compared.The reverse recovery characteristics were analyzed by diode capacitance as function of diode reverse voltage,the mixed circuit-device simulator MEDICI shown that floating junction had softness factor 0.949,while hard recovery characteristics were obtain for superjunction structure with softness factor 0.780 7.Trade-off must be made when static and dynamic performance is considered.

关 键 词：超结 浮结 肖特基势垒二极管 静态及动态特性 

分 类 号：TN311.7[电子电信—物理电子学]