L波段硅脉冲功率管52000器件小时的脉冲射频加速寿命试验  

52000 Device Hours Pulsed RF Accelerated Lifetime Test for L-band Si Pulsed Power Transistor

作　　者：王因生[1] 陶有迁[1] 徐全胜[2] 金毓铨[1] 傅义珠[1] 丁晓明[1] 王志楠[1] 

机构地区：[1]南京电子器件研究所,南京210016 [2]中国国防科技信息研究中心,北京100142

出　　处：《固体电子学研究与进展》2011年第5期473-477,共5页Research & Progress of SSE

摘　　要：利用红外热像显微测量峰值结温方法对L波段硅脉冲功率晶体管在脉冲射频(f=1.3 GHz,Pin=40 W,τ=150μs,D=10%)和峰值结温220°C条件下进行52 000器件小时的脉冲射频加速寿命试验。由此估算出该功率管在峰值结温125°C和上述RF条件下,器件失效率λ≤1.59×10-7h-1。试验分析表明,采用本试验方法可以更真实地评估射频功率管的可靠性水平。Based on the measured peak junction temperature of microwave power transistors using infrared microscope technique,52 000 device hours pulsed RF accelerated life time test under the RF working conditions（f=1.3 GHz,Pin=40 W,τ=150 μs,D=10%） and peak junction temperature of 220°C is described.Results available indicate that the failure rate λ is less than 1.59×10^-7/h at a peak junction temperature of 125°C and the RF working condition indicated above.Further analysis show that the method used in the test can be used to evaluate reliability of pulsed RF power transistor more realistically.

关 键 词：硅微波脉冲功率管 可靠性 寿命试验 峰值结温 

分 类 号：TN323.4[电子电信—物理电子学] TN306