GaAs导带中电子自旋极化的能量演化  

Energy-dependent Evolution of Electron Spin Polarization in Conduction Band of GaAs

作　　者：滕利华[1] 牟丽君[1] 

机构地区：[1]青岛科技大学数理学院,青岛266061

出　　处：《科学技术与工程》2011年第32期7884-7887,共4页Science Technology and Engineering

基　　金：青岛科技大学科研启动基金课题资助

摘　　要：考虑自旋极化依赖的带隙重整化效应,分别计算了常温与10 K的低温下GaAs导带中光注入电子自旋极化度的能量演化。计算过程中假设右旋圆偏振光激发,载流子浓度为2×1017 cm-3。发现常温下电子初始自旋极化度随过超能量的增大而增大,并非为通常认为的0.5。而在低温下,导带底附近电子初始自旋极化度几乎为0,电子初始自旋极化度也随过超能量的增大而增大,高能级上可以获得100%的电子初始自旋极化度。With spin-polarized-dependent band-gap renormalization effect taken into account,the energy-dependent evolution of photoexcited electron spin polarization is calculated at room temperature and low temperature.The exciting light to have right-handed circular polarization,and the carrier density is 2×1017cm-3.At room temperature,the initial degree of spin polarization is less than 0.5,and increases with increasing carrier densities.At low temperature,the initial degree of spin polarization is almost 0 near the bottom of the conduction band,the initial degree of spin polarization also increases with increasing carrier densities,and in particular,up to a maximum of 100% in larger excess-energy states.

关 键 词：电子初始自旋极化度 带隙重整化效应 费米分布 GAAS 

分 类 号：O471.1[理学—半导体物理]