纳米二氧化硅抛光液对低k材料聚酰亚胺的影响  

Effect of nano-SiO_2 slurry on low-k material(PI)

作　　者：胡轶[1] 刘玉岭[1] 刘效岩[1] 王立冉[1] 何彦刚[1] 

机构地区：[1]河北工业大学微电子研究所,天津300130

出　　处：《功能材料》2011年第B11期852-854,共3页Journal of Functional Materials

基　　金：国家中长期科技发展规划02科技重大专项资助项目(2009ZX02308)

摘　　要：以3英寸的P型〈111〉硅片为衬底,经过旋涂固化制备低介电常数(低k)材料聚酰亚胺。对聚酰亚胺进行化学机械抛光(CMP),考察实验前后,纳米二氧化硅抛光液对低k材料的结构和介电常数。实验中应用了2种纳米二氧化硅抛光液:一种是传统的铜抛光液;另一种为新型的阻挡层抛光液。通过扫描电镜(SEM)和介电常数测试结果显示,2种抛光液对低k材料,不论是在结构还是电特性方面的影响都不大。经铜抛光液抛光后,k值从最初的3.0变到3.08;经阻挡层抛光液抛光后,k值从最初的3.0变到3.28。实践证明,这两种纳米二氧化硅抛光液可以应用于集成电路。Low-k material（PI） was spun and baked on P type 〈111〉 Si substrate.The electronic character and structure of the material were tested by the process of chemical and mechanical polishing（CMP）and dipping.In this paper,there were two kinds of nano-SiO2 slurry,one of which was traditional Cu slurry and the other was new barrier slurry.The material was characterized by scanning electron microscope（SEM） and dielectric constant tester.The results show that dielectric constant changes from 3.0 to 3.08 after polished by the traditional Cu slurry,and reaches 3.28 after polished by the new barrier slurry.Also the structure is not destroyed.As described above,the two kinds of nano-SiO2 slurry are proposed to apply in the ultra large scale integration.

关 键 词：低介电常数材料 纳米二氧化硅抛光液 介电常数 漏电流 

分 类 号：TN406[电子电信—微电子学与固体电子学]