Sb_2O_3/CeO_2共掺杂ZnO薄膜的研究  

Research on Sb_2O_3/CeO_2-Doped ZnO Thin Film

作　　者：徐芸芸[1] 张韬[1] 李争鸣[1] 徐新[1] 

机构地区：[1]徐州空军学院,徐州221000

出　　处：《表面技术》2011年第6期62-64,共3页Surface Technology

摘　　要：采用射频磁控溅射技术制备Sb2O3/CeO2共掺杂ZnO薄膜,研究了薄膜的结构及紫外光吸收性能。结果表明:Sb2O3和CeO2共同掺入ZnO薄膜后,ZnO(002)晶面的XRD衍射峰强度明显下降,ZnO薄膜呈混晶方式生长;共掺杂ZnO薄膜的紫外吸收性能明显优于纯ZnO薄膜,Sb对掺杂ZnO薄膜的结构和紫外吸收性能的影响起主导作用,Ce起进一步的强化作用。The ZnO thin films doped with Sb2O3/CeO2 was prepared by RF magnetron sputtering technique. The results show that the Sb2 O3/CeO2-doped films had an prominent effect on the developing ways of crystal grains and UV absorption property. The films＇ UVA absorption is enhanced. The ultraviolet absorption peak become wide and the ab sorption intensity increases. Sb-doped ZnO thin films on the structure and properties of UV absorption plays a dominant role,and Ce plays an enhanced role.

关 键 词：磁控溅射 ZNO薄膜 掺杂 结构 紫外吸收 

分 类 号：TG174.444[金属学及工艺—金属表面处理] O484.4[金属学及工艺—金属学]