超薄栅氧MOS器件传统关态栅泄漏电流研究  

Study on the Gate Leakage Current of Ultra-thin MOS Devices in Conventional Off-state

作　　者：胡仕刚[1] 吴笑峰[1] 席在芳[1] 

机构地区：[1]湖南科技大学信息与电气工程学院,湖南湘潭411201

出　　处：《微电子学与计算机》2011年第12期133-136,共4页Microelectronics & Computer

基　　金：国家自然科学基金资助项目(61074051);湖南省教育厅资助项目(10C0709);湖南科技大学博士启动基金项目(E51080)

摘　　要：理论分析了MOSFET关态泄漏电流产生的物理机制,深入研究了栅氧化层厚度为1.4nm MOSFET传统关态下边缘直接隧穿栅泄漏现象.结果表明:边缘直接隧穿电流服从指数变化规律;传统关态下边缘直接隧穿对长沟道器件的影响大于短沟道器件;衬底反偏在一定程度上减小边缘直接隧穿泄漏电流.The physical mechanism of off-state leakage current is analyzed Abstractly.The edge direct-tunneling（EDT） gate leakage current of MOSFET with 1.4 nm gate oxide biased in conventional off-state is studied in depth.The results showed that the change of the EDT current obeys index law,the EDT makes a greater impact on short-channel devices than that on long-channel device in conventional off-state,and the EDT current is reduced to a certain extent with the substrate biased reversely.

关 键 词：直接隧穿 MOSFET 栅氧化层 

分 类 号：TN386[电子电信—物理电子学]