新一代CMOS器件栅介质材料研究进展  

THE STUDYING PROGRESS ON THE NEXT GENERATION GATE DIELECTRIC MATERIALS FOR CMOS DEVICES

作　　者：郭鸣[1] 周松华[1] 刘昌鑫[1] 

机构地区：[1]井冈山大学电子与信息工程学院,江西吉安343009

出　　处：《井冈山大学学报（自然科学版）》2011年第5期76-81,共6页Journal of Jinggangshan University (Natural Science)

基　　金：江西省教育厅科技项目(GJJ11181;GJJ08417);井冈山大学博士科研启动基金项目;华东师范大学优秀博士研究生培养基金(20080051)

摘　　要：随着微电子技术的飞速发展,按照摩尔定律发展的要求,SiO2的极限厚度已经成为Si基集成电路提高集成度的瓶颈。寻求代替SiO2的其它新一代高k栅介质已成为当今微电子技术发展的必然趋势。文章介绍了几种最有可能成为下一代栅介质的高k材料,并对其研究进展和存在的问题进行了阐述。With the rapid development of microelectronics, the limited thickness of SiO2 has been the node of evaluating the Si-based integrated circuits by Moore＇s Law. In order to overcome the scaling limitation, a replacement of SiO2 with dielectrics having a higher dielectric constant is unavoidable. Several promising alternatives of gate dielectric material are introduced. The latest development of high-k materials is reviewed, and some problems are also discussed.

关 键 词：高介电常数 栅介质 等效氧化层厚度 漏电流 

分 类 号：TN304.2[电子电信—物理电子学]