Si_(0.2)Ge_(0.8)/Ge异质结的离子束辅助固相外延生长  

Solid Phase Epitaxy Growth Combined with Ion Beam of Si_(0.2)Ge_(0.8)/Ge Heterostructure

作　　者：徐文婷[1,2] 肖清华 常青 屠海令[1] 

机构地区：[1]北京有色金属研究总院,北京100088 [2]有研半导体股份有限公司,北京100088

出　　处：《微纳电子技术》2011年第12期797-801,共5页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(60706001);国家科技重大专项资助项目(2008ZX02401)

摘　　要：采用离子束辅助固相外延技术,在Ge基片上制备了SiGe/Ge异质结。利用高分辨透射电镜(HRTEM)、能量散射谱(EDX)、喇曼散射谱对SiGe/Ge异质结的形貌、成分和结构等物理性质进行了表征。还利用上述分析手段研究了固相外延温度对SiGe/Ge异质结中SiGe外延层生长的影响。结果表明,低能条件下(30keV)离子注入有利于形成SiGe外延层;通过对SiGe外延层高分辨晶格像的傅立叶分析得出,900℃下进行固相外延能够有效抑制SiGe外延层中点缺陷的生成;而且利用该技术外延生长的SiGe层完全弛豫。SiGe/Ge heterostructure on Ge substrate was fabricated by the solid phase epitaxy （SPE） technology combined with the ion beam. The morphology, major component and structural properties of the heterostructure were characterized by the high-resolution transmission electron microscope （HRTEM）, energy dispersive X-ray （EDX） and Raman scattering spectrum. The influence of the SPE temperature upon the growth of SiGe epitaxial layer in the SiGe/Ge heterostructure was illustrated with above methods. The results show that lower energy （30 keV） ion implantation is better for the formation of SiGe epitaxy layer and the SPE process at 900 ℃ could avoid the generation of the point defect in SiGe epitaxy layer, which was testified by fast Fourier transform analysis of HRTEM patterns. Additionally, the research result illustrates that the SiGe layer is completely relaxed.

关 键 词：SiGe/Ge 异质结 离子注入 固相外延 缺陷 

分 类 号：TN304.42[电子电信—物理电子学] TN304.2