基于MOS电容衬底压阻的纳米梁检测研究  

Research on detection of nano-beams based on MOS capacitor substrate piezoresistive effect

作　　者：丁萃[1,2] 成海涛[1,2] 杨恒[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所微系统技术重点实验室,上海200050 [2]中国科学院研究生院,北京100040

出　　处：《传感器与微系统》2011年第12期47-49,53,共4页Transducer and Microsystem Technologies

摘　　要：传统的纳米谐振器压阻检测在工艺上需解决制备结深浅、掺杂浓度高的薄层电阻的技术难题。基于MOS电容衬底压阻的谐振式纳米梁系统是一种新型的压阻检测方案,它通过将MOS电容耗尽层下的掺杂区用作力敏电阻,回避了制备浅结高浓度电阻的技术问题,也解决了MOS沟道压阻抗干扰性差的问题,在SoI硅片上制作了150 nm厚的梁结构。在检测方面,通过设计屏蔽式驱动封装结构,解决了驱动信号电磁耦合干扰的问题,并结合一系列降低噪声、减小串扰的措施,实现了μV量级的微弱信号检测。测试得到该结构在常温常压下的Q值为197,谐振峰频率为3.96 MHz,输出端检测灵敏度为0.73 mV/nm。Traditional piezoresistive detection of nano-resonators faces great challenges in fabricating resistance of high doping and shallow junction. A novel piezoresistive detecting scheme is proposed, in which substrate beneath depletion layers of MOS capacitors are used as pi^zoresistors to by pass these challenges. Thickness of 150nm silicon nano-beams are fabricated on silicon-on-insulator （SoI） substrate. In the aspect of detection, electromagnetic coupling interference problems are solved by designing package structure, to realize the weak signal detection of μV levels. The quality factor and resonant frequency of the resonators under normal pressure and at room temperature are 197 and 3.96 MHz respectively, and sensitivity on the output port is 0.73 mV/nm.

关 键 词：纳米梁 谐振器 压阻检测 MOS电容 

分 类 号：TP212.1[自动化与计算机技术—检测技术与自动化装置]