常温低氮氩比下(002)择优取向氮化铝薄膜的制备  

The preparation of(002)-oriented aluminum nitride thin films under low nitrogen argon ratio at room temperature

作　　者：孙化冬[1] 彭冬香 张伟[1] 张立东[1] 刘望[1] 汪渊[1] 

机构地区：[1]四川大学原子核科学技术研究所教育部辐射物理及技术重点实验室,成都610064 [2]河北武邑中学,武邑053400

出　　处：《四川大学学报（自然科学版）》2011年第6期1386-1390,共5页Journal of Sichuan University(Natural Science Edition)

基　　金：国家自然科学基金(50771069;50871083);四川省科技支撑计划基金(2008FZ0002);教育部新世纪人才基金(NCET-08-0380)

摘　　要：常温下采用反应射频磁控溅射方法在玻璃基底上制备出(002)单一择优取向柱状结构的氮化铝薄膜,通过XRD分析发现溅射功率为80W、溅射气压为0.20 Pa、氮气与氩气比为5%时,氮化铝(002)晶体衍射峰最强,通过FESEM表面及截面分析表明在此条件下得到的氮化铝薄膜表面较平整、致密性较好.The AIN thin films with the（002）preferred orientation of columnar structure were deposited on glass substrate by RF reactive magnetron sputtering method. The AIN（002）diffraction peak intensities were analyzed by X-ray diffraction （XRD）. It shows that the diffraction peak is strongest when the sputtering power, sputtering pressure and nitrogen argon ratio are 80 W, 0.20 Pa and 5 %, respectively. Otherwise, it also demonstrates through FESEM on the surface and cross section that the AIN films in this conditions are more smooth and more density.

关 键 词：AIN薄膜 射频反应磁控溅射 择优取向 沉积速率 

分 类 号：TN305.92[电子电信—物理电子学]