低温生长SiO_2膜的性质及其在SiGe/Si HBT研制中的应用  

Properties of SiO_2 Films Deposited at low Temperature and Their Application in the Fabrication of SiGe/Si HBT

作　　者：徐晨[1,2] 邹德恕[1,2] 陈建新 杜金玉[1,2] 高国 罗辑[1,2] 魏欢 赵立新[1,2] 沈光地 

机构地区：[1]北京工业大学电子工程学系,北京100022 [2]北京市光电子技术实验室,北京100022

出　　处：《北京工业大学学报》1999年第4期45-48,共4页Journal of Beijing University of Technology

基　　金：国家"863"计划资助!863-307-15-4(06);国家自然科学基金!69876004;北京市科委高技术重点项目;北京市自然科学基金!4962005

摘　　要：用磁控溅射SiO2膜作为台面SiGe／SiHBT的表面保护纯化膜和光刻掩膜．测试分析了溅射工艺对SiO2膜的性质和SiGe／SiHBT性能的影响．研究发现，较高的衬底温度（200℃）有得于改善SiO2膜的质量．用溅射SiO2方法制备的HBT的电流增益明显高于用热分解正硅酸乙脂方法淀积SiO2制备的HBT．这说明溅射法避免了高温引起SiGe层应变驰豫所造成的HBT性能变差．SiO2 films used for passivation in the fabrication of mesa SiGe/Si HBTs were deposited by sputtering. The influence of the sputtering procedure on the propenties of the films and the performance of the HBTs was discussed. As it turned out that higher substrate temperature is favorable to the quality of the films. The electric current gain of the HBT with SiO2 deposited by sputtering is much higher than those deposited by thermal decomposition owing to that the former approach avoids the strain relaxation caused by high temperature procedure which would result in the degradation of the HBT performance.

关 键 词：磁控溅射 SIGE/SI HBT 低温生长 二氧化硅膜 

分 类 号：TN304.21[电子电信—物理电子学] O472[理学—半导体物理]