特种器件厚外延前后图形转移方法研究  

Pattern Alignment Before and After Thick-Layer Epitaxy for Special Device

作　　者：唐昭焕[1] 任芳[2] 谭开洲[1] 杨发顺 王斌[2] 刘勇[2] 陈光炳[1] 

机构地区：[1]模拟集成电路重点实验室,重庆400060 [2]中国电子科技集团公司第二十四研究所,重庆400060 [3]贵州省微纳电子技术重点实验室,贵阳550025

出　　处：《微电子学》2011年第6期914-917,共4页Microelectronics

基　　金：国家重大基础研究基金资助项目(Y61398)

摘　　要：提出了一种特种器件厚外延前后图形的转移方法。通过设计一块带外延前图形层的对位标记和投影光刻机识别标记的掩膜版,解决了厚外延之前图形的精确套准和厚外延之后投影光刻的难题,实现了厚外延前后的套刻精度高于0.5μm。该方法可广泛应用于带埋层的VDMOS、超结VDMOS、高压互补双极器件,以及高压BCD器件的投影光刻。A method for pattern alignment before and after thick-layer epitaxy for special device was presented.In this method,a mask with both alignment mark for proximity lithography and identification mark for stepper was designed to solve the problem of precise alignment to patterns before thick-layer epitaxy and projection lithography by stepper after thick-layer epitaxy.Using this method,the accuracy for alignment of patterns before and after thick-layer epitaxy reached 0.5 μm.This pattern alignment method special for thick-layer epitaxy is also applicable for projection lithography of VDMOS with NBL,super-junction VDMOS,high-voltage complementary bipolar device and high-voltage BCD device.

关 键 词：特种器件 厚外延 图形转移 VDMOS 超结 

分 类 号：TN405[电子电信—微电子学与固体电子学]