射频磁控溅射法制备AZO/p-Si异质结及其性能研究  

Heterojunction and Properties of AZO/p-Si Prepared by RF Magnetron Sputtering

作　　者：刘斌[1] 沈鸿烈[1] 岳之浩[1] 江丰[1] 冯晓梅[1] 潘园园[1] 

机构地区：[1]南京航空航天大学材料科学与技术学院,南京210016

出　　处：《电子器件》2011年第6期621-624,共4页Chinese Journal of Electron Devices

基　　金：国家863计划项目(2006AA03Z219);江苏高校优势学科建设工程资助项目

摘　　要：利用射频磁控溅射法,在p-Si衬底上生长了Al掺杂的ZnO(AZO)薄膜,并进而制备了AZO/p-Si异质结。X射线衍射仪、紫外-可见光分光光度计、四探针测试仪和霍尔效应测试仪测量表明,AZO薄膜具有良好的结晶质量、光学和电学特性。暗态下的I-V测试表明,AZO/p-Si异质结具有较好的整流特性,反向饱和电流为1.29×10-6A,±2V处的正向和反向电流之比为229.41,计算得出异质结的理想因子为2.28。在标准光照下AZO/p-Si异质结呈现出明显的光生伏特效应,这种异质结太阳电池具有2.51%的光电转换效率。AZO/p-Si heterojunction was fabricated by the use of RF magnetron to sputter Al-doped ZnO （AZO）film onto p-type Si wafer substrate. The properties of AZO films were studied by X-ray diffraction （XRD） , UV-vis spectrophotometer, four-point probe and Hall effect measurement. The results indicated that AZO films have good crystal- lization quality, electrical and optical properties. The I- V measurement showed that AZO/p-Si heterojunction possesses fairly good rectifying behavior under dark condition and the reverse saturation current is 1.29 ~ 10-6A. The ratio of forward and reverse current at _＋2V is 229.41 and the ideality factor of the heterojunction is calculated to be 2.28. AZO/p-Si heterojunction shows obvious photovohaic effect under standard illumination condition, and the conversion efficiency of the heterojunction solar cell is 2.51%

关 键 词：射频磁控溅射 AZO/p—Si异质结 I-V特性 太阳电池 

分 类 号：O475[理学—半导体物理] TN364[理学—物理]