铝诱导纳米硅制备大晶粒多晶硅薄膜的研究  

Research on Preparation of Large Grain Size Polycrystalline Silicon Thin Films by Aluminum-induced Crystallization from Nanocrystalline Silicon

作　　者：方茹[1] 沈鸿烈[1] 吴天如[1] 刘斌[1] 沈剑沧[2] 

机构地区：[1]南京航空航天大学材料科学与技术学院,南京211106 [2]南京大学物理学系固体微结构物理国家重点实验室,南京210093

出　　处：《人工晶体学报》2011年第6期1387-1393,共7页Journal of Synthetic Crystals

基　　金：国家高技术研究发展计划(863计划)资助项目(2006AA03Z219);江苏高校优势学科建设工程资助项目

摘　　要：本文以超白玻璃为衬底,利用热丝化学气相沉积和磁控溅射法制备了Glass/nc-Si/Al的叠层结构,然后置于管式退火炉中在H2气氛下进行5 h诱导晶化,用XRD、光学显微镜、扫描电镜和拉曼光谱对样品进行了表征。结果表明所有样品都是有(111)择优取向的多晶硅薄膜,在425℃诱导时,多晶硅晶粒尺寸最大达400μm,但薄膜不连续;随着诱导温度升高到450℃,样品表面已形成了连续的多晶硅薄膜,但晶粒尺寸有所减小;475℃下诱导获得的最大晶粒尺寸约为200μm,此时多晶硅薄膜的结晶质量更好。还从动力学的角度分析了铝诱导纳米硅的晶化机理。The glass/nc-Si/A1 layered structures were prepared by HWCVD and magnetron sputtering onhigh transparence glass substrate. The layered structures were kept in a tube furnace at HE atmosphere for 5 h to undertake an aluminum-induced crystallization process. The prepared samples were characterized by XRD, optical microscope, SEM and Raman spectrum. Polycrystalline film with a strong （111 ）orientation was found in all samples. The grain size up to 400 μm was formed in the sample treated at 425 ℃ in a discontinuous film. As the temperature increased to 450℃, continuous polycrystalline film with smaller grain size was produced. For samples prepared at 475℃, the polyerystalline film presentseven better crystal quality with a maximum grain size about 200μm. In addition, the crystallization mechanism of AIC from nanoerystalline silicon from the point of view of dynamics was carried out.

关 键 词：大晶粒 多晶硅薄膜 铝诱导 纳米硅 

分 类 号：O484.1[理学—固体物理] TB34[理学—物理]