制备GaN基材料的数值模拟研究进展  

Research Progress in the Numerical Simulation to the Manufacturing of GaN-based Materials

作　　者：丁祥[1] 许玲[1] 高文峰[1] 刘滔[1] 林文贤[1] 

机构地区：[1]云南师范大学太阳能研究所教育部可再生能源材料先进技术与制备重点实验室,云南昆明650092

出　　处：《云南师范大学学报（自然科学版）》2012年第1期25-30,共6页Journal of Yunnan Normal University:Natural Sciences Edition

基　　金：国家自然科学基金资助项目(50879074;11072211);高等学校博士学科点专项科研基金(20105303110001);云南省应用基础研究计划(2011FN017);西部高原地区太阳能有效利用及可持续开发研究教育部创新团队发展计划资助项目

摘　　要：综述了紫外探测器的实际应用,特别介绍了紫外预警系统的作用原理;详细介绍了GaN基材料及其生长方法;对MOCVD法制备GaN基材料的过程做了详细描述,特别介绍了国内外MOCVD系统制备GaN基材料的数值模拟方法。This paper reviews the practical application of ultraviolet photodetectors, especially introduces the working principle of ultraviolet warning systems. The GaN-based materials and their growth and doping methods as well as the process to manufacture GaN-based materials by the MOCVD method are described in detail. In particular, the numerical simulation methods to simulate the manufacturing of GaN-based materials by MOCVD systems in China and overseas are introduced.

关 键 词：紫外探测器 GAN 金属有机物化学气相淀积 数值模拟 

分 类 号：O242[理学—计算数学]