金薄膜的反应离子刻蚀工艺研究  

Study on Reactive Ion Etching Technology of Au Thin Film

作　　者：赵飞[1] 党元兰[1] 

机构地区：[1]中国电子科技集团公司第54研究所,河北石家庄050081

出　　处：《电子工艺技术》2012年第1期53-56,共4页Electronics Process Technology

摘　　要：采用反应离子刻蚀(RIE)工艺对金薄膜进行了干法刻蚀研究,得到了刻蚀速率随两极间偏压、气体压强和气体成分等因素变化的规律。试验结果表明,刻蚀速率随偏压的增加而增大;当压强增加时,刻蚀速率先增加后减小;不同种类的气体对刻蚀速率影响较大;刻蚀时间与刻蚀厚度在一定范围内成正比。另外,找到了控制刻蚀过程均匀性和选择比的方法。Dry etching of Au was studied by reactive ion etching（RIE） technology and the etching rate was presented to be variable with etching parameters,such as the bias between anode and cathode,etching pressure and component of gas.It is indicated that the etching rate increases with the bias and lower pressure,while decreasing at higher pressure.The component of gas has great effect on the etching rate.Etching thickness changes proportionally with etching time.Also,the uniformity and the selection ratio can be controlled by adjusting the parameters.

关 键 词：金薄膜 反应离子刻蚀 刻蚀速率 

分 类 号：TN405.983[电子电信—微电子学与固体电子学]