电应力对Al/SnAgCu/Cu互连结构剪切强度及断裂模式的影响  

Effect of Current Stress on Shear Strength and Fracture Mode of Al/SnAgCu/Cu Interconnecting Structure

作　　者：陆裕东[1] 万明[2] 恩云飞[1] 王歆[2] 成俊[3] 何小琦[1] 

机构地区：[1]工业和信息化部电子第五研究所,广东广州510610 [2]华南理工大学材料科学与工程学院,广东广州510640 [3]华南理工大学电子与信息学院,广东广州510640

出　　处：《华南理工大学学报（自然科学版）》2011年第11期120-124,共5页Journal of South China University of Technology(Natural Science Edition)

基　　金：科技部国际科技合作与交流重大项目(2010DFB10070);国家预研基金资助项目(51323060305);中国博士后科学基金资助项目(20080430825)

摘　　要：连结构的剪切失效位置和失效模式,分析了两种不同应力条件下互连结构失效形貌间的差异,研究并确定了高电流应力导致的电迁移对Al/SnAgCu/Cu互连结构剪切强度及断裂模式的影响.结果表明:高温老化实验后,倒装凸点互连结构中出现Al金属/焊料界面的脆性开裂和凸点焊料的延展性断裂两种剪切断裂模式;高温高电流应力条件下老化后,倒装凸点互连结构的剪切失效位置和断面形貌发生变化,电迁移作用导致的层状空洞和金属间化合物的异常生长成为影响倒装凸点互连结构剪切强度及失效模式的主要因素;同时,由于倒装凸点串联回路中电流方向的交替性变化,倒装凸点互连结构在加电实验中出现的两种断裂模式在回路中呈交替分布的特殊失效现象.The failure position and failure mode of SnAgCu flip-chip solder bumps enduring thermal stress and electrical/thermal complex stress before shear test were investigated,and the difference in microstructure of the interconnecting structure enduring different stresses were compared.Moreover,the effects of electromigration induced by high current density on the shear strength and the fracture mode of Al/SnAgCu/Cu interconnecting structure were analyzed.The results indicate that there are two shear fracture modes of the flip-chip solar bumps after the aging at a high temperature,namely the brittle fracture on the Al-solder interface and the ductile fracture in the solder bumps,that the failure position and the fracture surface morphology of the interconnecting structure change after the aging at a high temperature and high current stress,that the pancake-type voids and the abnormal growth of intermetallic compound induced by electromigration are the main cause of failure,and that the two fracture modes alternately distribute in the interconnecting structure due to the alternate change of current flow in flip-chip solder bumps.

关 键 词：SNAGCU 凸点 互连结构 机械强度 断裂模式 金属间化合物 电迁移 

分 类 号：TG401[金属学及工艺—焊接] TG111