绒面AZO干法制备及性能研究  

Preparation and Investigation of Textured AZO Transparent Conductive Thin Film by Directly Dry Etching

作　　者：王文娜[1] 张大伟[1] 陶春先[1] 黄元申[1] 倪争技[1] 庄松林[1] 

机构地区：[1]上海理工大学光电信息与计算机工程学院,上海200093

出　　处：《光电工程》2012年第2期147-150,共4页Opto-Electronic Engineering

基　　金：国家自然科学基金(60908021);上海市纳米专项(1052nm07100);上海市科技启明星(09QA1404200);上海市重点学科项目第三期(S30502);上海市研究生创新基金项目(JWCXSL1102)

摘　　要：利用射频溅射方法,制得AZO透明导电膜,并用离子束刻蚀制备绒面,得到绒面AZO透明导电膜。比较刻蚀前后光电性能及表面形貌,发现透过率稍有下降,在可见光波段透过率在80%以上;电阻率略有上升,但仍保持在10-3?·cm数量级,最低为2.91×10-3?·cm;刻蚀后薄膜表面形貌变化较大,大多数薄膜表面呈现"坑状"结构,横向尺寸在0.5?1.0μm,开口角在120°左右,表面粗糙度从7.29nm上升到36.64nm。薄膜具有较好的表面微结构,在作太阳能电池前电极方面有较好的应用前景。Aluminum-doped Zinc Oxide （AZO） transparent conductive thin films were prepared by RF sputtering and surface-textured AZO transparent conductive thin films were obtained by using ion etching. Effects of ion etching on the optical, electrical and structural properties of the films were investigated. A slight decrease was found in transmittance, but the transmittance is still more than 80% in the visible spectrum. The resistivity increased slightly, but still at the 10-3Ω？cm level, the minimum resistivity is 2.91×10-3 Ω？cm. The surface topography changed noticeably after ion etching. Most films show ＂pit-like＂ structure, lateral dimensions in the 0.5？1.0 μm, opening angle 120° or so, and Root Mean Square （RMS） roughness increased from 7.29 nm to 36.64 nm. The films have good surface micro-structure, and show a good prospect as solar cells front-electrode.

关 键 词：AZO薄膜 绒面结构 太阳能电池 离子束刻蚀 

分 类 号：O472[理学—半导体物理] TB43[理学—物理]