直接键合硅片的三步亲水处理法及界面电特性  

Three Steps Method of Hydrophilicity Treatment on Silicon Wafer Direct Bonding and Bonding Interface Electrical Properties

作　　者：何进[1] 陈星弼[1] 王新[1] 

机构地区：[1]电子科技大学微电子所四川成都610054

出　　处：《功能材料》2000年第1期58-59,共2页Journal of Functional Materials

摘　　要：亲水处理是硅片能否直接键合成功的关键。基于亲水处理的微观机理分析和不同清洗剂亲水处理的过程及效果 ,本文提出了独特的三步亲水处理法。这一方法既能顺利完成室温预键合 ,又能减少界面上非定形大尺寸SiOx 体的生成 ,避免了界面对电输运的势垒障碍 。The successful silicon wafer direct bonding mainly depends on the good hydrophilicity treatment before prebonding.Based on the analysis of micromechanism of hydrophilicity treatment and effect of the different cleaning solution on the silicon surface,the unique three steps method of hydrophilicity treatment has been developed in the paper,which can not only realize successful bonding ,but also avoid the large size amorphous SiO x grown-up which causes the barriers on the electric transport in the bonding interface.As a result, the ideal bonding interface can be obtained by it.

关 键 词：硅片 键合 亲水处理 界面 SDB技术 

分 类 号：TN304.12[电子电信—物理电子学]