神经MOS晶体管  

Neuron MOS Transistor

作　　者：管慧[1] 汤玉生[1] 

机构地区：[1]上海交通大学微电子技术研究所,上海200030

出　　处：《半导体技术》2000年第1期2-7,共6页Semiconductor Technology

摘　　要：神经MOS晶体管是1991年发明出来的一种具有高功能度的多输入栅控制的浮栅MOS器件。本文介绍了它的基本结构和特点,论述了这种新器件及其电路的国外研究现状。The neuron MOS transistor was invented in 1991.It is a high functional floating gate MOS transistor with multiple input control gates.In this paper,the basic configuration and main characteristics of the neuron MOS transistor are introduced.The status quo and trend for the studies on this kind of new device and its integrated circuits are reviewed.The researches,which the authors have made,are also presented.

关 键 词：神经MOS晶体管 浮栅器件 MOS器件 

分 类 号：TN386.1[电子电信—物理电子学]