衬底温度对CdTe/ZnTe多层薄膜制备的影响  

The influence of substrate temperature on the preparation of CdTe/ZnTe Multi-layer thin films

作　　者：程四兴[1] 黎兵[1] 唐萍[1] 冯良桓[1] 蔡亚平[1] 张静全[1] 李卫[1] 武莉莉[1] 曾广根[1] 王文武[1] 

机构地区：[1]四川大学材料学院,成都610064

出　　处：《四川大学学报（自然科学版）》2012年第1期188-192,共5页Journal of Sichuan University(Natural Science Edition)

基　　金：国家自然科学基金(60506004);国家高技术研究与发展计划(0030105403034)

摘　　要：采用射频磁控溅射法制备了CdTe/ZnTe多层薄膜,并在制备单层CdTe薄膜和ZnTe薄膜的基础上,研究了衬底温度对CdTe/ZnTe多层薄膜性质的影响;通过XRD和透过谱、吸收谱的分析,对其结构进行了研究.结果表明在185℃下制备的CdTe/ZnTe多层膜中,CdTe和ZnTe均沿(111)晶面择优取向生长,尤其是ZnTe沿(111)晶面择优取向明显,衍射强度极大.通过比较不同衬底温度,发现185℃生长的样品衍射峰强度最高,成膜质量较好;通过吸收谱图分析,185℃下沉积的样品对光有较好的吸收性.CdTe/ZnTe multi-layer thin films are prepared by magnetron sputtering. On the base of pre- paring single CdTe films and ZnTe films, the influence of substrate temperature on the properties of CdTe/ZnTe multi-layer thin films is studied. The structure is studied through the analysis of XRD and absorption spectrum. CdTe and ZnTe thin films have an essentially （111） perferred growth orientation when the CdTe/ZnTe multi-layer films are prepared at 185 ℃. Especially, ZnTe layers have significantly （111） perferred growth orientation and great diffraction intensity. The simples prepared at 185℃ have the greater diffraction intensity and better film quality when compared with those prepared at roomtemperature and 300 ℃. As can be seen through the absorption spectrum, the films deposited at 185 ℃ have better absorption.

关 键 词：磁控溅射法 CdTe/ZnTe 太阳电池 衬底温度 

分 类 号：TN304.2[电子电信—物理电子学]