微波脉冲功率器件瞬态热阻测试研究  

Experimental Study on Transient Thermal Resistance of Microwave Pulse Power Device

作　　者：丁晓明[1] 王佃利[1] 李相光[1] 蒋幼泉[1] 王因生[1] 黄静[1] 

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2012年第1期54-57,共4页Research & Progress of SSE

摘　　要：介绍了功率器件装配过程中控制芯片烧结工艺参数的重要性,用显微红外热像仪测试了器件烧结工艺参数优化前后的微波瞬态热像,由热像测试数据计算出器件的热阻,并对器件的热阻值进行了比较,结果表明,通过烧结工艺参数优化,可以将器件热阻降低约20%。This paper describes the importance rameters during assembly. Using infrared thermal controlling the chip soldering process paimaging system to capture the transient infrared images of the devices with and without process optimization, and calculating and comparing the thermal resistances, we find that the soldering process optimization brings us a 20% reduction of thermal resistance.

关 键 词：瞬态红外热像 脉冲 结温 热阻 

分 类 号：TN78[电子电信—电路与系统]