硅基3C-SiC薄膜的外延生长技术  

Research on the epitaxial growth technique of 3C SiC on silicon substrates

作　　者：李跃进[1] 杨银堂[1] 贾护军[1] 朱作云[1] 

机构地区：[1]西安电子科技大学微电子所,陕西西安710071

出　　处：《西安电子科技大学学报》2000年第1期80-82,87,共4页Journal of Xidian University

基　　金：国家自然科学基金资助项目 !( 6 9772 0 2 3 )

摘　　要：用常压化学气相淀积法在(100)Si衬底上异质外延生长了3CSiC薄膜。为减小3CSiC与硅之间的晶格失配,在化学气相淀积系统中通过对硅衬底表面碳化制备了缓冲层,确定了形成缓冲层的最佳条件。用X射线衍射、俄歇电子能谱、扫描电镜对薄膜的特性进行了分析。测量结果表明,1300℃下在Si衬底缓冲层上可以获得3CSiC单晶。The films of cubic SiC are heteroepitaxially grown by atmospheric pressure chemical vapor deposition ( APCVD ) on (100) Si substrates. To reduce the large lattice mismatch between cubic SiC and silicon, a buffer layer is made by carbonizing the surface of the Si substrate in the CVD system. An optimum condition for the buffer layer is determined. The characteristics of the samples have been measured and analyzed by X ray diffraction, Auger electron spectroscopy (AES) and scanning electron microscopy (SEM). It is shown that the single crystals of cubic SiC are obtained at a substrate temperature of 1?300 ℃ on Si substrate with the buffer layer prepared by carbonization.

关 键 词：碳化硅 化学气相淀积 外延生长 薄膜 硅基 

分 类 号：TN304.24[电子电信—物理电子学]