GaN电感耦合等离子体刻蚀的优化和损伤分析  

Etching Damage Analysis and Optimization of Inductively Coupled Plasma Etching of GaN

作　　者：滕龙[1,2] 于治国[1,2] 杨濛[1,2] 张荣[1,2] 谢自力[1,2] 刘斌[1,2] 陈鹏[1,2] 韩平[1,2] 郑有炓[1,2] 施毅[1,2] 

机构地区：[1]南京大学 江苏省光电功能材料重点实验室 [2]南京大学 电子科学与工程学院,南京210093

出　　处：《微纳电子技术》2012年第3期181-186,共6页Micronanoelectronic Technology

基　　金：国家重点基础研究发展计划(973计划)资助项目(2011CB301900);国家高技术研究发展计划(863计划)资助项目(2011AA03A103);国家自然科学基金资助项目(60990311,60820106003,60906025,60936004,61176063);江苏省自然科学基金资助项目(BK2011010,BK2010385,BK2009255,BK2010178);南京大学扬州光电研究院研发基金项目

摘　　要：通过分别改变电感耦合等离子体(ICP)刻蚀过程中的ICP功率和DC偏压,对ICP刻蚀GaN材料的工艺条件和损伤情况进行了系统的研究。刻蚀后表面的损伤和形貌通过扫描电子显微镜(SEM)、原子力显微镜(AFM)、电子能谱(EDS)、荧光光谱(PL)等技术进行表征和分析。实验结果表明,刻蚀速率随ICP功率和DC偏压的增加而增加;刻蚀损伤与DC偏压成正比,而与ICP功率的关系较为复杂。实验中观测到刻蚀后GaN样品的荧光光谱带边发射峰和黄带发射峰的强度均有明显下降,这意味着刻蚀产生的缺陷中存在非辐射复合中心,并且该非辐射复合中心的密度与DC偏压成正比。为了兼顾高刻蚀速率和低刻蚀损伤,建议使用高ICP功率(>450 W)和低DC偏压(<300 V)进行ICP刻蚀。The process conditions and damages for the inductively coupled plasma （ICP） etching of GaN were systemically studied by varying the ICP power and DC bias in ICP etching process, respectively. The surface morphology and damages of the etched surface were characterized and analyzed by scanning electron microscope （SEM）, atomic force microscope （AFM）, energy dis- persive spectrometer （EDS） and photoluminescence （PL）. The experimental results show that the ICP etch rate increases with the increase of the ICP power and DC bias, the etching damage is proportional to the DC bias, while the relationship of the etching damage and ICP power is much more complicated. The significant decline for the intensities of PL band-edge emission and yellow- band emission peak was observed in experiments, which means that the non-radiative recombina- tion center exists in defects produced by etching, and the density of the non-radiative recombinationcenter is proportional to the DC bias. In order to achieve high etch rate and low etch damage, the high ICP power （〉450 W） and low DC bias （〈300 V） should be used in the ICP etching.

关 键 词：氮化镓(GaN) 电感耦合等离子体(ICP)刻蚀 损伤 功率 DC偏压 

分 类 号：TN305.7[电子电信—物理电子学]