真空退火对低频PECVD氮化硅薄膜性能的影响  

Influences of Vacuum Annealing on Properties of Silicon Nitride Films Prepared by Low-frequeny PECVD Technology

作　　者：柳聪[1] 蒋亚东[1] 黎威志[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《半导体光电》2012年第1期74-78,共5页Semiconductor Optoelectronics

基　　金：国家自然科学基金资助项目(60736005)

摘　　要：研究了真空退火温度对不同流量比工艺参数下PECVD氮化硅薄膜性能的影响,测试了退火后氮化硅薄膜厚度、折射率以及在氢氟酸中的腐蚀速率。结果表明,退火后氮化硅薄膜厚度及折射率变化与薄膜沉积工艺条件有关,而薄膜在氢氟酸中的腐蚀速率在退火后大大降低。结合退火前后氮化硅薄膜的红外透射谱对以上测试结果进行了讨论。Influences of vacuum annealing on properties of silicon nitride films prepared with different gas flow ratios by plasma enhance chemical vapor deposition（PECVD） were studied.Film thickness,refractive index（RI） and the etching rate in HF were measured,respectively.Results show that,the thickness and RI of annealed silicon nitride films were related to gas flow ratios,whilst the etching rate in HF decreased rapidly with the increase of annealing temperature.In addition,Fourier transform infrared spectrometry（FTIR） was employed to investigate the origin of above measurement results.

关 键 词：真空退火 PECVD 氮化硅 红外透射谱 

分 类 号：TN305[电子电信—物理电子学]